• Model: MUBW10-12A7
  • 270 Units in Stock
  • Manufactured by: IXYS

Description of MUBW10-12A7


Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Voltage (G-E SHORT)VCES1200Volts
Gate-Emitter Voltage (C-E SHORT)VGES±20Volts
Collector Current (TC = 25°C)IC50Amperes
Peak Collector CurrentICM100*Amperes
Emitter Current** (Tc = 25°C)IE50Amperes
Peak Emitter Current**IEM100*Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)Pc400Watts
Mounting Torque, M4 Main Terminal0.98 ~ 1.47N · m
Mounting Torque, M5 Mounting1.47 ~ 1.96N · m
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso2500Vrms

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

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