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MUBW45-12T6K IXYS IGBT

MUBW45-12T6K

  • Model: MUBW45-12T6K
  • 267 Units in Stock
  • Manufactured by: IXYS

Description of MUBW45-12T6K

Description

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise Specified

RatingsSymbolCM150E3U-12HUnits
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Voltage (G-E SHORT)VCES600Volts
Gate-Emitter Voltage (C-E SHORT)VGES±20Volts
Collector Current (Tc = 25°C)IC150Amperes
Peak Collector CurrentICM300*Amperes
Emitter Current** (Tc = 25°C)IE150Amperes
Peak Emitter Current**IEM300*Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)Pc600Watts
Mounting Torque, M5 Main Terminal–2.5 ~ 3.5N · m
Mounting Torque, M6 Mounting–3.5 ~ 4.5N · m
Weight–310Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso2500Vrms

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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