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MUBW50-12A8 IXYS IGBT

MUBW50-12A8

  • Model: MUBW50-12A8
  • 269 Units in Stock
  • Manufactured by: IXYS

Description of MUBW50-12A8

Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise Specified

SymbolParameterConditionsRatingsUnit
VCESCollector-emitter voltageG-E Short600V
VGESGate-emitter voltageC-E Short±20V
ICCollector current
TC = 25°C150A
ICMPulse                                                                 (Note 2)300
IE (Note 1)Emitter current
TC = 25°C150A
IEM (Note 1)Pulse                                                                 (Note 2)300
PC (Note 3)Maximum collector dissipationTC = 25°C520W
TjJunction temperature
–40 ~ +150°C
TstgStorage temperature
–40 ~ +125°C
VisoIsolation voltageTerminals to base plate, f = 60Hz, AC 1 minute 2500Vrms
Torque strengthMain terminals M5 screw2.5 ~ 3.5N • m
Mounting M5 screw2.5 ~ 3.5N • m
WeightTypical value680g

1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.


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