QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Key Parameters Maximum Ratings (Tj=25°C)

Symbol	Item			Conditions	Ratings		Unit
					QCA50B40 QCA50A40	QCA50B60 QCA50A60
V_CBO	Collector-Base Voltage				400	600	V
V_CEX	Collector-Emitter Voltage			V_BE=-2V	400	600	V
V_EBO	Emitter-Base Voltage				10		V
I_C	Collector Current			( ) =pw ≤1ms	50 (100)		A
-I_C	Reverse Collector Current				50		A
I_B	Base Current				3		A
P_T	Total power dissipation			TC=25°C	300		W
T_j	Junction Temperature				-40~+150		°C
Tstg	Storage Temperature				-40~+125		°C
V_ISO	Isolation Voltage			A.C.1minute	2500		V
	Mounting Torque	QCA30B	Mounting (M6)	Recommended Value 2.5~3.9 (25~40)	4.7 (48)		N•m (kgf•cm)
			Terminal (M5)	Recommended Value 1.5~2.5 (15~25)	2.7 (28)
		QCB30A	Mounting (M5)	Recommended Value 1.5~2.5 15~25)	2.7 (28)
			Terminal (M4)	Recommended Value 1.0~1.4 (10~14)	1.5 (15)
	Mass	QCA30B/QCB30A		Typical Value	240/195		g