QM100HY-H Mitsubishi IGBT

larger image

QM100HY-H

Symbol	Parameter	Conditions	Ratings	Unit
VCEX (SUS)	Collector-emitter voltage	IC=1A, VEB=2V	600	V
VCEX	Collector-emitter voltage	VEB=2V	600	V
VCBO	Collector-base voltage	Emitter open	600	V
VEBO	Emitter-base voltage	Collector open	7	V
IC	Collector current	DC	100	A
–IC	Collector reverse current	DC (forward diode current)	100	A
PC	Collector dissipation	TC=25 C	620	W
IB	Base current	DC	6	A
–ICSM	Surge collector reverse current (forward diode current)	Peak value of one cycle of 60Hz (half wave)	1000	A
Tj	Junction temperature		???0~+150	C
Tstg	Storage temperature		???0~+125	C
Viso	Isolation voltage	Charged part to case, AC for 1 minute	2500	V
???/font>	Mounting torque	Main terminal screw M5	1.47~1.96	N·m
		Main terminal screw M5	15~20	kg·cm
		Mounting screw M6	1.96~2.94	N·m
		Mounting screw M6	20~30	kg·cm
???/font>	Weight	Typical value	250	g