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QM30E2Y-2H Mitsubishi IGBT

QM30E2Y-2H

  • Model: QM30E2Y-2H
  • 333 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM30E2Y-2H

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:3.2 V
Continuous Collector Current at 25 C:400 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2500 W
Maximum Operating Temperature:+ 125 C
Package / Case:IHM190
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT

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