>

QM30E2Y-2H Mitsubishi IGBT

QM30E2Y-2H

  • Model: QM30E2Y-2H
  • 333 Units in Stock
  • Manufactured by: Mitsubishi

Description of QM30E2Y-2H

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:3.2 V
Continuous Collector Current at 25 C:400 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2500 W
Maximum Operating Temperature:+ 125 C
Package / Case:IHM190
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.