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SEMIX603GAR066HDS Semikron IGBT

SEMIX603GAR066HDS

  • Model: SEMIX603GAR066HDS
  • 262 Units in Stock
  • Manufactured by: Semikron

Description of SEMIX603GAR066HDS

Key Parameters Absolute Maximum Ratings

SymbolConditionsValuesUnit
IGBT
VCES
600V
ICTj = 175 °CTc = 25 °C720A
 Tc = 80 °C541A
ICnom 600A
ICRMICRM = 2xICnom1200A
VGES
-20 ~ 20V
tpscVCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C6μs
Tj -40 ~ 175°C
Inverse diode
IFTj = 175 °CTc = 25 °C771A
 Tc = 80 °C562A
IFnom 600A
IFRMIFRM = 2xIFnom1200A
IFSMtp = 10 ms, sin 180°, Tj = 25 °C1800A
Tj -40 ~ 175°C
Freewheeling diode
IFTj = 175 °CTc = 25 °C795A
 Tc = 80 °C577A
IFnom 600A
IFRMIFRM = 2xIFnom1200A
IFSMtp = 10 ms, sin 180°, Tj = 25 °C1800A
Tj -40 ~ 175°C
Module
It(RMS)
600A
Tstg
-40 ~ 125°C
VisolAC sinus 50Hz, t = 1 min4000V


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