SGP10N60A Infineon IGBT

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SGP10N60A

Model: SGP10N60A
437 Units in Stock
Manufactured by: Infineon

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Description of SGP10N60A

Description

Power Diode Module DD90F series are designed for various rectifier circuits. DD90F has two diode chips connected in series in 25mm (1inch) width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1600V is avaiable for various input voltage.

Key Parameters Maximum Ratings

Symbol	Item		Conditions	Ratings	Unit
V_RRM	Repetitive Peak Reverse Voltage			400	V
V_RSM	Non-Repetitive Peak Reverse Voltage			480	V
I_{F (AV)}	Average Forward Current		Single phase, half wave, 180° conduction, Tc:93°C	90	A
I_{F (RMS)}	R.M.S. Forward Current		Single phase, half wave, 180° conduction, Tc:93°C	140	A
I_FSM	Surge Forward Current		½cycle, 50/60Hz, peak Value, non-repetitive	2100/2300	A
I²t	I²t		Value for one cycle of surge current	22000	A²S
V_ISO	Isolation Breakdown Voltage (R.M.S.)		A.C.1minute	2500	V
Tj	Junction Temperature			-40 to +150	°C
Tstg	Storage Temperature			-40 to +125	°C
	Mounting Torque	Mounting (M5)	Recommended 1.5-2.5 (25-40)	2.7 (28)	N•m (kgf•cm)
	Mounting Torque	Terminal (M5)	Recommended 1.5-2.5 (15-25)	2.7 (28)	N•m (kgf•cm)
	Mass			170	g