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SHD724401 Sensitron IGBT

SHD724401

  • Model: SHD724401
  • 359 Units in Stock
  • Manufactured by: Sensitron

Description of SHD724401

DESCRIPTION

600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA

KEY PARAMETER  ELECTRICAL CHARACTERISTICS  (Tj=25oC UNLESS OTHERWISE SPECIFIED) 

PARAMETERSYMBOTMINTYPMAXUNIT
IGBT SPECIFICATIONS 

Collector to Emitter Breakdown Voltage 

IC = 250 μA, VGE = 0V

BVCES600--V

Continuous Collector Current, 1mS        Tc=25oC

                                                        Tc=90oC

IC

 

-

 

-

 

40(1)

40

A

 

Pulsed Collector Current, 1mS ICM--130A

Short Circuit time, VGE=15V, VCE=500V, Tj=125oC

di/dt < 300 A/sec, IC<300A

tsc--130A
Gate to Emitter Voltage VGE--+/-20V
Gate-Emitter Leakage Current, VGE = +/-20V IGES--+/-100nA
Gate Threshold Voltage, IC=2mAVGE(TH)4.0-7.0V

Zero Gate Voltage Collector Current 

VCE = 600 V,   VGE=0V   Ti=25oC  

VCE = 480 V,   VGE=0V  Ti=125oC

ICES

 

 

-

-

 

-

-

 

0.25

3.0

 

Ma

mA

Collector to Emitter Saturation Voltage,    TC=25oC

IC=40A, VGE=15V                                 TC=125oC

VCE(SAT)

 

-

 

2.0

2.3

2.3

2.5

V

 

Input Capacitance  

Output Capacitance 

Reverse Transfer Cap. 

VCE = 25 V, VGE = 0 V,  f = 1 MHz 

Cies 

Coes 

Cres 

 

-

 

2800

300

200

 

-

 

pF

 

Turn On Delay Time 

Rise Time  

Turn Off Delay Time 

Fall Time 

Turn off Energy Loss 

(Tj  = 125 oC, IC = 40A, VGE = 15V, inductive load, VCC  = 

300 V, RG = 22 Ω

td(on) 

tr 

td(off) 

tf  

 

Eoff

Eon

-

-

-

-

 

-

-

100 

50 

300 

40  

 

1.5  

2.0

-

-

-

-

 

-

-

 

 

nsec

 

 

mJ

mJ

Maximum Thermal Resistance RθJC--0.60oC/W

 


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