PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC=250 μA, VGE = 0V	BV_CES	-	-	1200	V
Continuous Collector Current T_C=25^oC T_C=90^oC	I_C	-	-	40⁽¹⁾ 35	A
Gate to Emitter Voltage	V_GE	-	-	+/-20	V
Gate-Emitter Leakage Current IGE = +/-20V	I_GES	-	-	+/-500	nA
Gate Threshold Voltage, I_C=2mA	V_GE(TH)	4.5	6.0	7.5	V
Zero Gate Voltage Collector Current V_GE=0V V_CE = 1200 V, T_i=25^oC V_CE = 800 V, T_i=125^oC	I_CES	-	-	1000 5.0	μA mA
Collector to Emitter Saturation Voltage I_C = 35A, V_GE = 15V	V_CE(SAT)	-	2.7	3.3	V
Input Capacitance Output Capacitance Reverse Transfer Cap. V_CE = 25 V, V_GE = 0 V, f = 1 MHz	C_ies C_oes C_res	-	8400 350 90	-	pF
Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-off Energy Loss Turn-on Energy Loss (I_C = 30A, V_GE = 15V, V_CE = 600 V, R_G = 5 Ω	t_d(on) t_r t_d(off) t_f E_off E_on	- - - - - -	90 50 270 80 4.7 5.5	- - - - - - -	nsec mJ mJ
Junction-to-Case Thermal Resistance	RθJC	-	-	0.35	^oC/W