PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 3 mA, VGE = 0V	B_VCES	1000	-	-	V
Continuous Collector Current T_{C =}25 ^oC T_C = 90 ^oC	I_C	-	-	50 25	A
Pulsed Collector Current, 1mS	I_CM	-	-	100	A
RBSOA V_GE = 15V, V_CE = 800V, T_j = 125 ^oC L = 100 uH, Clamped Inductive Load	I_CM	-	-	50	A
Gate to Emitter Voltage	V_GE	-	-	+/-20	V
Gate-Emitter Leakage Current, V_GE = +/-20V	IG_ES	-	-	+/- 100	nA
Gate Threshold Voltage, IC= 0.25 mA, V_CE = V_GE	V_GE(TH)	2.5	-	5.0	V
Zero Gate Voltage Collector Current VCE = 800 V, VGE=0V Ti=25^oC VCE = 800 V, VGE=0V Ti=125^oC	C_ES	- -	- -	0.25 1.0	mA mA
Collector to Emitter Saturation Voltage, TC = 25 ^oC IC = 25A, VGE = 15V, TC = 125 ^oC	V_CE(SAT)	-	3.5 3.8	4.0 4.5	V
Input Capacitance Output Capacitance Reverse Transfer Cap. VCE = 25 V, VGE = 0 V, f = 1 MHz	C_ies C_oes C_res	-	2750 200 50	-	pF
Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn off Energy Loss T_j = 125 ^oC, I_C= 25A, V_GE = 15V, inductive load, V_CE = 800 V, R_G = 33 Ω	t_d(on) t_r t_d(off) t_f E_off E_on	- - - -	100 250 720 800 8.0 3.5	- - - - -	nsec mJ mJ
Maximum Thermal Resistance	RΘqJC	-	-	0.60	^oC