>

SHSMG1010 Sensitron IGBT

SHSMG1010

  • Model: SHSMG1010
  • 355 Units in Stock
  • Manufactured by: Sensitron

Description of SHSMG1010

DESCRIPTION

1000 VOLT, 50 AMP IGBT DEVICE HIGH SPEED, LOW VCE IGBT

KEY PARAMETER ELECTRICAL CHARACTERISTICS (Tj=25oC UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 3 mA, VGE = 0V
BVCES1000--V
Continuous Collector Current TC = 25 oC
TC = 90 oC
IC--50
25
A
Pulsed Collector Current, 1mSICM--100A
RBSOA VGE = 15V, VCE = 800V, Tj = 125 oC
L = 100 uH, Clamped Inductive Load
ICM--50A
Gate to Emitter VoltageVGE--+/-20V
Gate-Emitter Leakage Current, VGE = +/-20VIGES--+/- 100nA
Gate Threshold Voltage, IC= 0.25 mA, VCE = VGEVGE(TH)2.5-5.0V
Zero Gate Voltage Collector Current
VCE = 800 V, VGE=0V Ti=25oC
VCE = 800 V, VGE=0V Ti=125oC
CES

 

-
-

-
-
0.25
1.0
mA
mA
Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 25A, VGE = 15V, TC = 125 oC
VCE(SAT)-3.5
3.8
4.0
4.5
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
Cres
-2750
200
50
-pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn off Energy Loss
Tj = 125 oC, IC = 25A, VGE = 15V, inductive load,
VCE = 800 V, RG = 33 Ω

td(on)
tr
td(off)
tf

Eoff
Eon

-
-
-

-

100
250
720
800

8.0
3.5

-
-
-
-

-

 

nsec

mJ
mJ

Maximum Thermal ResistanceRΘqJC--0.60oC

 


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity
Copyright © 2018 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.