SIGC121T120R2C Infineon IGBT


  • Model: SIGC121T120R2C
  • 449 Units in Stock
  • Manufactured by: Infineon

Description of SIGC121T120R2C


Power Diode Module DD60HB series are designed for various rectifier circuits. DD60HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage ratage up to, 1,600V is avaiable for various input voltage.

Key Parameters

Maximum Ratings

VRRMRepetitive Peak Reverse Voltage 1200V
VRSMNon-Repetitive Peak Reverse Voltage 1350V
IF (AV)Average Forward CurrentSingle phase, half wave, 180° conduction, Tc:111°C60A
IF (RMS)R.M.S. Forward CurrentSingle phase, half wave, 180° conduction, Tc:111°C95A
IFSMSurge Forward Current½cycle, 50/60Hz, peak Value, non-repetitive1100/1200A
I2tI2tValue for one cycle of surge current6000A2S
VISOIsolation Breakdown Voltage (R.M.S.)A.C.1minute2500V
TjJunction Temperature -40 to +125°C
TstgStorage Temperature -40 to +125°C
Mounting (M5)Recommended 2.5-3.9 (25-40)4.7 (48)N•m
Terminal (M5)
Recommended 1.5-2.5 (15-25)2.7 (28)
 Mass 170g

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