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SKIM459GD12E4 Semikron IGBT

SKIM459GD12E4

  • Model: SKIM459GD12E4
  • 322 Units in Stock
  • Manufactured by: Semikron

Description of SKIM459GD12E4

Features

  • IGBT 4 Trench Gate Technology
  • Solderless sinter technology
  • VCE(sat) with positive temperature coefficient
  • Low inductance case
  • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
  • Pressure contact technology for thermal contacts and electrical contacts
  • High short circuit capability, self limiting to 6 x IC
  • Integrated temperature sensor

Applications

  • Automotive inverter
  • High reliability AC inverter wind
  • High reliability AC inverter drives

Key Parameters Absolute Maximum Ratings

SymbolConditionsValuesUnit
IGBT
VCES
1200V
ICTj = 175 °CTc = 25 °C554A
 Tc = 70 °C450A
ICnom 450A
ICRMICRM = 3xICnom1350A
VGES
-20 ~ 20V
tpscVCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V		Tj = 150 °C10μs
Tj -40 ~ 175°C
Inverse diode
IFTj = 175 °CTc = 25 °C438A
 Tc = 70 °C347A
IFnom 450A
IFRMIFRM = 3xIFnom1350A
IFSMtp = 10 ms, sin 180°, Tj = 25 °C2430A
Tj -40 ~ 175°C
Module
It(RMS)
700A
Tstg
-40 ~ 125°C
VisolAC sinus 50Hz, t = 1 min2500V


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