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SKM75GAR063D Semikron IGBT

SKM75GAR063D

  • Model: SKM75GAR063D
  • 342 Units in Stock
  • Manufactured by: Semikron

Description of SKM75GAR063D

Features

  • N channel, homogeneous Si-structure (NPT-Non punch-through IGBT)
  • Low tail current with low temperature dependence
  • High short circuit capability, self limiting if term. G is clamed to E
  • Pos. temp. -coeff of VCEsat
  • Very low Cies, Coes, Cres
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
  • Large clearance (10mm) and creepage distances (20mm)

Applications

  • Switching (not for linear use)
  • Switched mode power supplies
  • UPS
  • Three phase inverters for servo / AC motor speed control
  • Pulse frequencies also > 10kHz

Key Parameters

Absolute Maximum Ratings - IGBT

SymbolConditionsValuesUnits
VCESTj = 25 °C600V
ICTj = 150 °C     Tcase = 25 °C
                        Tcase = 75 °C		100
75
A
A
ICRMICRM=2xICnom
150A
VGES ±20V
tpsc
VCC = 300 V; VGE ≤ 20 V; Tj = 125 °C
VCES < 600 V
10
μs


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