This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

Absolute Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	DPAK IPAK	D²PAK I²PAK, TO-220	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	V_CES(clamped)		V
V_ECS	Emitter collector voltage (V_GE = 0)	20		V
I_C⁽¹⁾	Collector current (continuous) at T_C = 100°C	25	30	A
I_CP⁽²⁾	Pulsed collector current	40		A
V_GE	Gate-emitter voltage	V_GE(clamped)		V
P_TOT	Total dissipation at T_C = 25°C	125	150	W
E_AS	Single pulse energy T_C= 25°C, L = 3 mH, V_CC = 50 V	300		mJ
E_AS	Single pulse energy T_C=150°C, L = 3 mH, V_CC = 50 V	180		mJ
E_SD	Human body model, R= 1.5 kΩ , C = 100 pF	8		kV
	Machine model, R = 0, C = 100 pF	800		V
	Charged device model	2		kV
T_stg	Storage temperature	-55 to 175		°C
T_j	Operating junction temperature	-55 to 175		°C

1. Calculated according to the iterative formula:

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