STGD3NB60SD STMicro IGBT

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STGD3NB60SD

Model: STGD3NB60SD
394 Units in Stock
Manufactured by: STMicro

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Description of STGD3NB60SD

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_Gs = 0)	600	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_C = 25 °C	6	A
I_C	Collector Current (continuous) at T_C = 100 °C	3	A
I_CM^(.)	Collector Current (pulsed)	25	A
P_TOT	Total Dissipation at T_C = 25 °C	48	W
	Derating Factor	0.32	W/°C
Tstg	Storage Temperature	– 65 to 175	°C
T_j	Max. Operating Junction Temperature	175	°C