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STGD7NB60S STMicro IGBT

STGD7NB60S

  • Model: STGD7NB60S
  • 400 Units in Stock
  • Manufactured by: STMicro

Description of STGD7NB60S

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

Key Parameters

ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
VCESCollector-Emitter Voltage (VGS = 0)600V
VECRReverse Battery Protection20V
VGEGate-Emitter Voltage± 20V
ICCollector Current (continuous) at Tc = 25 oC15A
ICCollector Current (continuous) at Tc = 100 oC7A
ICM(·)Collector Current (pulsed)60A
PtotTotal Dissipation at Tc = 25 oC55W

Derating Factor0.44W/oC
TstgStorage Temperature-65 to 150oC
TjMax. Operating Junction Temperature150oC

(·) Pulse width limited by safe operating area


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