Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS = 0)	600	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_C = 25°C	20	A
I_C	Collector Current (continuous) at T_C = 100°C	10	A
I_CM(.)	Collector Current (pulsed)	80	A
P_TOT	Total Dissipation at T_C = 25°C	25	W
	Derating Factor	0.2	W/°C
V_ISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	2500	V
T_stg	Storage Temperature	–65 to 150	°C
T_j	Max. Operating Junction Temperature	150	°C