Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop.

Key Parameters

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	600	V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25°C	20	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100°C	10	A
I_CL⁽²⁾	Collector current (pulsed)	40	A
V_GE	Gate-emitter voltage	±20	V
P_TOT	Total dissipation at T_C = 25°C	60	W
T_j	Operating junction temperature	– 55 to 150	°C