STGP19NC60K STMicro IGBT

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STGP19NC60K

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Absolute maximum ratings


Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	600	V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25 °C	35	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100 °C	20	A
I_CL⁽²⁾	Turn-off latching current	75	A
I_CP⁽³⁾	Pulsed collector current	75	A
V_GE	Gate-emitter voltage	±20	V
P_TOT	Total dissipation at T_C = 25 °C	125	W
t_scw	Short circuit withstand time, V_CE = 0.5 V_(BR)CES T_j = 125 °C, R_G = 10 Ω, V_GE = 12 V	10	μs
T_j	Operating junction temperature	– 55 to 150	°C