Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Key Parameters

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
		TO-220	DPAK
V_CES	Collector-Emitter Voltage (V_GS = 0)	600		V
V_ECR	Emitter-Collector Voltage	20		V
V_GE	Gate-Emitter Voltage	±20		V
I_C	Collector Current (continuous) at T_C = 25°C (#)	25		A
I_C	Collector Current (continuous) at T_C = 100°C (#)	14		A
I_{CM ()}	Collector Current (pulsed)	50		A
P_TOT	Total Dissipation at T_C = 25°C	80	70	W
	Derating Factor	0.64	0.56	W/°C
T_stg	Storage Temperature	– 55 to 150		°C
T_j	Operating Junction Temperature	– 55 to 150		°C