STGW19NC60H STMicro IGBT

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STGW19NC60H

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Absolute maximum ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	TO-247	TO-220, D²PAK	Unit
V_CES	Collector-emitter voltage (V_GE= 0)	600		V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25 °C	42	40	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100 °C	21	19	A
I_CL⁽²⁾	Turn-off latching current	40		A
I_CP⁽³⁾	Pulsed collector current	60		A
V_GE	Gate-emitter voltage	±20		V
P_TOT	Total dissipation at T_C = 25 °C	140	130	W
T_j	Operating junction temperature	– 55 to 150		°C