• Model: STGW30NC60WD
  • 253 Units in Stock
  • Manufactured by: STMicro

Description of STGW30NC60WD


This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at 25 °C60A
IC(1)Collector current (continuous) at 100 °C30A
ICP(2)Collector current (pulsed)150A
ICL(3)Turn-off latching current150A
VGEGate-emitter voltage± 20V
IFDiode RMS forward current at TC = 25 °C30A
IFSMSurge not repetitive forward current tp= 10 ms sinusoidal120A
PTOTTotal dissipation at TC = 25 °C200W
TstgStorage temperature– 55 to 150°C
TjOperating junction temperature

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