STGW30NC60WD STMicro IGBT

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STGW30NC60WD

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	600	V
I_C⁽¹⁾	Collector current (continuous) at 25 °C	60	A
I_C⁽¹⁾	Collector current (continuous) at 100 °C	30	A
I_CP⁽²⁾	Collector current (pulsed)	150	A
I_CL⁽³⁾	Turn-off latching current	150	A
V_GE	Gate-emitter voltage	± 20	V
I_F	Diode RMS forward current at T_C = 25 °C	30	A
I_FSM	Surge not repetitive forward current t_p= 10 ms sinusoidal	120	A
P_TOT	Total dissipation at T_C = 25 °C	200	W
T_stg	Storage temperature	– 55 to 150	°C
T_j	Operating junction temperature	– 55 to 150	°C