• Model: STGW38IH120D
  • 260 Units in Stock
  • Manufactured by: STMicro

Description of STGW38IH120D


This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. This device is well suited for the resonant or soft switching application.

Key Parameters

Absolute maximum ratings
VCESCollector-emitter voltage (VGE = 0)1200V
IC(1)Collector current (continuous) at 25 °C60A
IC(1)Collector current (continuous) at 100 °C30A
ICL(2)Turn-off latching current45A
ICP(3)Pulsed collector current45A
VGEGate-emitter voltage±25V
PTOTTotal dissipation at TC = 25 °C235W
IFDiode RMS forward current at TC = 25 °C30A
IFSMSurge non repetitive forward current tp = 10 ms sinusoidal100A
TjOperating junction temperature–55 to 150°C

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