• Model: STGY50NC60WD
  • 269 Units in Stock
  • Manufactured by: STMicro

Description of STGY50NC60WD


This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings

VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Collector current (continuous) at TC = 25 °C110A
IC(1)Collector current (continuous) at TC = 100 °C50A
ICL(2)Turn-off latching current180A
ICP(3)Pulsed collector current180A
IFDiode RMS forward current at TC = 25 °C30A
IFSMSurge not repetitive forward current (tp=10 ms sinusoidal)120A
VGEGate-emitter voltage±20V
PTOTTotal dissipation at TC = 25 °C278W
TjOperating junction temperature-55 to 150C

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