STGY50NC60WD STMicro IGBT

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STGY50NC60WD

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GE = 0)	600	V
I_C⁽¹⁾	Collector current (continuous) at T_C = 25 °C	110	A
I_C⁽¹⁾	Collector current (continuous) at T_C = 100 °C	50	A
I_CL⁽²⁾	Turn-off latching current	180	A
I_CP⁽³⁾	Pulsed collector current	180	A
I^F	Diode RMS forward current at T_C = 25 °C	30	A
I_FSM	Surge not repetitive forward current (t_p=10 ms sinusoidal)	120	A
V_GE	Gate-emitter voltage	±20	V
P_TOT	Total dissipation at T_C = 25 °C	278	W
T_j	Operating junction temperature	-55 to 150	C