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Item Name |
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Price |
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Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low... |
261 |
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Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low... |
263 |
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Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low... |
264 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of... |
266 |
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Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low... |
269 |
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CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - SingleManufacturerSTMicroelectronicsSeriesPowerMESHâ„¢PackagingTubePart... |
278 |
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CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - SingleManufacturerSTMicroelectronicsSeriesPowerMESHâ„¢PackagingTubePart... |
325 |
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CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - SingleManufacturerSTMicroelectronicsSeries-PackagingTubePart StatusActiveIGBT... |
327 |
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CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - SingleManufacturerSTMicroelectronicsSeriesPowerMESHâ„¢PackagingTape & Reel... |
352 |
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CategoriesDiscrete Semiconductor ProductsTransistors - IGBTs - SingleManufacturerSTMicroelectronicsSeries-PackagingTape & Reel (TR)Part... |
363 |
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380 |
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Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector... |
383 |
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Description This IGBT utilizes the advanced Power MESH™process resulting in an excellent trade-offbetween switching performance and low... |
386 |
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Description Using the latest high voltage technology based on apatented strip layout, STMicroelectronics has designedan advanced family of IGBTs, the... |
389 |
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Description Based on PowerMESH technology and thanks to a new lifetime control system, this new series exhibits very low turn-off energy realizing... |
391 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
392 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
393 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
394 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
395 |
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396 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
397 |
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Description Using the latest high voltage technology based ona patented strip layout, STMicroelectronics hasdesigned an advaced family of IGBTs,... |
398 |
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399 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
400 |
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Description Using the latest high voltage technology based ona patented strip layout, STMicroelectronics hasdesigned an advaced family of IGBTs,... |
401 |
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402 |
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Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs,... |
403 |
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Description Using the latest high voltage technology based on apatented strip layout, STMicro electronics has designed an advanced family of IGBTs,... |
404 |
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Description Based on PowerMESH technology and thanks to a new lifetime control system, this new series exhibits very low turn-off energy realizing... |
405 |
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406 |
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