TM25T3A-H Mitsubishi IGBT


  • Model: TM25T3A-H
  • 341 Units in Stock
  • Manufactured by: Mitsubishi

Description of TM25T3A-H

Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.1 V
Continuous Collector Current at 25 C:280 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:1000 W
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPAC
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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