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VUB50-12PO1 IXYS IGBT

VUB50-12PO1

  • Model: VUB50-12PO1
  • 206 Units in Stock
  • Manufactured by: IXYS

Description of VUB50-12PO1

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.7 V
Continuous Collector Current at 25 C:200 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:695 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoDUAL-3
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:12

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