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DF650R17IE4 Infineon IGBT

DF650R17IE4

  • Model: DF650R17IE4
  • 260 Units in Stock
  • Manufactured by: Infineon

Description of DF650R17IE4

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters

Absolute Maximum Ratings

RatingsSymbolCM50TU-24FUnits
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Voltage (G-E SHORT)VCES1200Volts
Gate-Emitter Voltage (C-E SHORT)VGES±20Volts
Collector Current (Tc = 25°C)IC50Amperes
Peak Collector Current (Tj ≤ 150°C)ICM100*Amperes
Emitter Current**IE50Amperes
Peak Emitter Current**IEM100*Amperes
Maximum Collector Dissipation (Tj < 150°C)Pc320Watts
Mounting Torque, M4 Main Terminal-15in-lb
Mounting Torque, M5 Mounting-31in-lb
Weight-570Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso2500Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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