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DF900R12IP4D Infineon IGBT

DF900R12IP4D

  • Model: DF900R12IP4D
  • 214 Units in Stock
  • Manufactured by: Infineon

Description of DF900R12IP4D

Description

Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters

Absolute Maximum Ratings

CharacteristicsSymbolMG400Q2YS60AUnits
Power Device Junction TemperatureTj-20 to 150°C
Storage TemperatureTstg-40 to 125°C
Operating Temperature RangeTope-20 ~ 100°C
Mounting Torque, M5 Mounting Screws-31in-lb
Mounting Torque, M6 Main Terminal Screws-40in-lb
Module Weight (Typical)-375Grams
Isolation Voltage, AC 1 minute, 60Hz SinusoidalVISO2500Volts


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