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DIM1200ESM33-F Dynex IGBT

DIM1200ESM33-F

  • Model: DIM1200ESM33-F
  • 294 Units in Stock
  • Manufactured by: Dynex

Description of DIM1200ESM33-F

Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.

The DIM1200ESM33-F000 is a single switch 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10?s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

Key Parameters

VCES 3300V
VCE (sat)*(typ)2.8V
IC(max)1200A
IC(PK)(max)2400A

*(measured at the auxiliary terminals)


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