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DIM1200FSM12-A Dynex IGBT

DIM1200FSM12-A

  • Model: DIM1200FSM12-A
  • 275 Units in Stock
  • Manufactured by: Dynex

Description of DIM1200FSM12-A

Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The DIM1200FSM12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10μs short circuit withstand. This module is optimised applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

Key Parameters

VCES 1200V
VCE(sat)*(typ)2.2V
IC(max)1200A
IC(PK)(max)2400A

*(measured at the power busbars and not the auxiliary terminals)


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