IHW30N60T Infineon IGBT

larger image

IHW30N60T

Model: IHW30N60T
421 Units in Stock
Manufactured by: Infineon

No Datasheet
Get a Quote

Description of IHW30N60T

Description

Power Diode Module DD300KB Series are designed for various rectifier circuits. DD300KB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1600V is available for various input voltages.

Key Parameters Maximum Ratings (Tj = 25°C unless otherwise specified)

Symbol	Item		Conditions	Ratings	Unit
V_RRM	Repetitive Peak Reverse Voltage			1200	V
V_RSM	Non-Repetitive Peak Reverse Voltage			1300	V
I_F(AV)	Average Forward Current		Single phase, half wave, 180° conduction, Tc : 91°C	300	A
I_F(RMS)	R.M.S. Forward Current		Single phase, half wave, 180° conduction, Tc : 91°C	465	A
I_FSM	Surge Forward Current		½ cycle, 60Hz, peak value, non-repetitive	6000	A
I²t	I²t		Value for one cycle of surge current	150000	A²S
Tj	Operating Junction Temperature			−40 to +150	°C
Tstg	Storage Temperature			−40 to +125	°C
V_ISO	Isolation Breakdown Voltage (R.M.S.)		A.C. 1 minute	2500	V
	Mounting Torque	Mounting (M5)	Recommended Value 1.5-2.5 (15-25)	2.7 (28)	N·m (kgf·cm)
	Mounting Torque	Terminal (M8)	Recommended Value 8.8-10.0 (90-105)	11 (115)	N·m (kgf·cm)
	Mass		Typical Value	510	g