Description of IHW40N60RF
Description
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
Key Parameters
Maximum Ratings
| Symbol | Item | Conditions | Ratings | Unit |
| VCES | Collector-emitter voltage | VGE = 0V
| 3300 | V
|
| VGES | Gate-emitter voltage | VCE = 0V
| ±20 | V
|
| IC | Collector current | DC, TC = 60°C | 400 | A
|
| ICM | Pulse (Note 1) | 800 | A
|
| IE (Note 2) | Emitter current | | 400 | A
|
| IEM(Note 2) | Pulse (Note 1) | 800 | A
|
| PC (Note 3) | Maximum power dissipation | TC = 25°C, IGBT part | 3400 | W
|
| Tj | Junction temperature | -
| –40 ~ +150 | °C |
| Tstg | Storage temperature | -
| –40 ~ +125 | °C |
| Viso | Isolation voltage | Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. | 6000 | V
|
-
| Mounting torque | Main terminals screw M8 | 6.67 ~ 13.00 | N·m |
| Mounting screw M6 | 2.84 ~ 6.00 | N·m |
| Auxiliary terminals screw M4 | 0.88 ~ 2.00 | N·m |
-
| Mass | Typical value | 1.5
| kg
|
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
