>

MDM600H65E Hitachi IGBT

MDM600H65E

  • Model: MDM600H65E
  • 384 Units in Stock
  • Manufactured by: Hitachi

Description of MDM600H65E

Key Parameters

Maximum Ratings (TC=25°C)

ItemSymbolRated Value Unit
Collector-Emitter VoltageVCES600V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC75A
1msICp150
Collector Power Dissipation
Pc
320W
Junction Temperature Range
Tj-40 ~ +150°C
Storage Temperature Range
Tstg-40 ~ +125°C
Isolation Voltage (Terminal to Base AC, 1 min.)
VISO2,500V (RMS)
Mounting Torque Module Base to Heatsink
Ftor2
N·m (kgf·cm)
Busbar to Main Terminal
2 (20.4)


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Hitachi IGBT product

MDM600E45AMDM600E45A
MDM750H65E2 MDM750H65E2
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.