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MDM750H65E2 Hitachi IGBT

MDM750H65E2

  • Model: MDM750H65E2
  • 375 Units in Stock
  • Manufactured by: Hitachi

Description of MDM750H65E2

Key Parameters

MAXIMUM RATINGS (Tc=25°C)

Item   Symbol      PCHMB50B12       Unit   
Collector-Emitter VoltageVCES1200V
Gate - Emitter VoltageVGES+/- 20V
Collector Current DCIC50A
 1 msICP100
Collector Power DissipationPC250W
Junction Temperature RangeTj-40 to +150°C
Storage Temperature RangeTstg-40 to +125°C
Isolation Voltage (Terminal to Base AC, 1 min.) VISO2,500V
Mounting Torque Module Base to HeatsinkFtor

2

N•m

 Bus Bar to Main Terminals


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