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MDM800H45E2-H Hitachi IGBT

MDM800H45E2-H

  • Model: MDM800H45E2-H
  • 381 Units in Stock
  • Manufactured by: Hitachi

Description of MDM800H45E2-H

Key Parameters

MAXMUM RATINGS (Tc=25oC)

ItemSymbol                           PCHMB75B12                  
Unit
Collector-Emitter VoltageVCES1200V
Gate - Emitter VoltageVGES+/ - 20V
Collector CurrentDCIC75A
1msICP150
Collector Power DissipationPC400W
Junction Temperature RangeTj-40 to +150oC
Storage Temperature RangeTstg-40 to +125oC
Isolation Voltage Terminal to Base AC, 1 min.)VISO2500V
Mounting TorqueModlue Base to HeatsinkFTOR3N•m
Bus Bar to Main Terminals2


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