Characteristics		Symbol	Rating	Unit
Collector-emitter voltage		V_CES	1200	V
Gate-emitter voltage		V_GES	±20	V
Reverse voltage		V_R	1200	V
Collector current	DC	I_C	100	A
Collector current	1ms	I_CP	200	A
Forward current	DC	I_F	100	A
Forward current	1ms	I_FM	200	A
Collector power dissipation (Tc = 25°C)		P_C	670	W
Junction temperature		T_j	150	°C
Storage temperature range		T_stg	−40 ~ 125	°C
Isolation Voltage		V_Isol	2500 (AC 1 min.)	V
Screw Torque (Terminal / mounting)		—	3 / 3	N·m

MG100Q1ZS40 Toshiba IGBT

MG100Q1ZS40