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MG100Q1ZS50 Toshiba IGBT

MG100Q1ZS50

  • Model: MG100Q1ZS50
  • 276 Units in Stock
  • Manufactured by: Toshiba

Description of MG100Q1ZS50

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC(25°C / 80°C)150 / 100A
1msICP(25°C / 80°C)300 / 200
Forward CurrentDCIF100A
1msIFM200
Collector Power Dissipation (Tc=25°C)PC660W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500(AC 1 min.)V
Screw Torque (Terminal/Mounting)-3/3N·m


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