Symbol	Parameter		Conditions	Ratings	Unit
V_CES	Collector-emitter voltage			1700	V
V_GES	Gate-emitter voltage			±20	V
V_SES	Sense-emitter voltage			40	V
I_C	Collector current	DC		400	A
I^CP	Collector current	1ms		800	A
I_F	Forward current	DC		400	A
I_FM	Forward current	1ms		800	A
P_C	Collector power dissipation		TC = 25°C	2750	W
Tj	Junction temperature			150	°C
Tstg	Storage temperature range			–40 ~ 125	°C
V_Isol	Isolation voltage			4000 (AC 1 minute)	V
–	Screw torque	Terminal (M4/M6)		2/3	N·m
–	Screw torque	Mounting		3	N·m

MG400V1US51A Toshiba IGBT

MG400V1US51A