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MG400Q1US51 Toshiba IGBT

MG400Q1US51

  • Model: MG400Q1US51
  • 292 Units in Stock
  • Manufactured by: Toshiba

Description of MG400Q1US51

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC
(25°C / 80°C)		520/ 400
A
1msICP
(25°C / 80°C)		1040/ 800
Forward CurrentDCIF400A
1msIFM800
Collector Power Dissipation (Tc=25°C)PC3000W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500
(AC 1 minute)		V
Screw Torque (Terminal/Mounting)-2/3/3N·m


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