>

MG400Q1US51 Toshiba IGBT

MG400Q1US51

  • Model: MG400Q1US51
  • 292 Units in Stock
  • Manufactured by: Toshiba

Description of MG400Q1US51

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC
(25°C / 80°C)		520/ 400
A
1msICP
(25°C / 80°C)		1040/ 800
Forward CurrentDCIF400A
1msIFM800
Collector Power Dissipation (Tc=25°C)PC3000W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500
(AC 1 minute)		V
Screw Torque (Terminal/Mounting)-2/3/3N·m


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Toshiba IGBT product

MG400Q1US41MG400Q1US41
MG400V1US51A MG400V1US51A
Copyright © 2026 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.