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SPM4012006 Sensitron IGBT

SPM4012006

  • Model: SPM4012006
  • 372 Units in Stock
  • Manufactured by: Sensitron

Description of SPM4012006

DESCRIPTION

A high density Dual H-Bridge capabable of driving 12A peak at 60V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision current sense reistors. The device does not need heat sinking and is housed in an encapsulated sealed enclosure. The drive input signals are TTL compatable.

KEY PARAMETER ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=25oC UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
MOSFET SPECIFICATIONS (Per Device)
Drain-to-Source Breakdown VoltageBVDSS60--V
Continuos Drain Current TC = 25 oC
                                  TC = 100 oC
ID--12
8.7
A
Pulsed Drain Current, Pulse Width limited to 1 msecIDM--97A
Zero Gate Voltage Drain Current
VDS = 60V, VGS=0V Ti=25oC
VDS= 60 V, VGS=0V Ti=125oC
ICSS--20
250
uA
uA
Static Drain-to-Source On Resistance, Tj = 25 oC
                                                   Tj = 150 oC
ID= 7.5A, VGS = 10V,
RDSON-

7.4

14.8

9.4

18.8

Maximum Thermal ResistanceRθJC--35oC/W
Maximum operating Junction TemperatureTjmax-40-150oC
Maximum Storage Junction TemperatureTjmax-55-150oC
Rise Timetr 20 ns
Fall Timetf 20 ns


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