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SPM6G070-060D Sensitron IGBT

SPM6G070-060D

  • Model: SPM6G070-060D
  • 347 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G070-060D

KEY PARAMETER ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25oC UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 500 μA, VGE = 0V		BVCES600--V
Continuous Collector Current TC = 25 oC
                                   TC = 80 oC		IC--75
60		A
Pulsed Collector Current, Pulse Width limited by TjMaxICM--150A
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V Ti=25oC
VCE = 480 V, VGE=0V Ti=125oC		ICES--1
10		mA
mA
Collector to Emitter Saturation Voltage, Tj = 25 oC
IC=30A
IC=70A
IC=90A		VCE(SAT)

-

 

 

1.15
1.50
1.70

 

1.30
1.80
2.00

V
Maximum Thermal ResistanceRθJC--0.50oC/W
Maximum operating Junction TemperatureTjmax-40-150oC
Maximum Storage Junction TemperatureTjmax-55-150oC

 


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