Description of SPM6G120-120D
DESCRIPTION
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
KEY PARAMETER ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25oC UNLESS OTHERWISE SPECIFIED)
| PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT |
| IGBT SPECIFICATIONS |
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0V | BVCES | 1200 | - | - | V |
Continuous Collector Current TC = 25 oC
TC = 80 oC | IC | - | - | 120
80 | A |
| Pulsed Collector Current, 10mS | ICM | - | - | 180 | A |
Zero Gate Voltage Collector Current (For the module)
VCE = 1200 V, VGE=0V Ti=25oC
VCE = 800 V, VGE=0V Ti=125oC | ICES | - | - | 2
15 | mA
mA |
Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 80A, VGE = 15V, TC = 125 oC | VCE(SAT) | - | 1.9
2.2 | 2.3 | V |
| IGBT Internal Turn On Gate Resistance | | | 30 | | Ohm |
| IGBT Internal Turn Off Gate Resistance | | | 10 | | Ohm |
| IGBT Internal Soft Shutdown Turn Off Gate Resistance | | | 100 | | Ohm |
| Short Circuit Time, Conditions TBD | | | 10 | | usec |
DC Bus Voltage Rate of Rise With 15V Supply Removed,
dv/dt | | - | - | 20 | V/usec |
| Junction To Case Thermal Resistance | RθJC | - | - | 0.27 | oC/W |
