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SPM6G120-120D Sensitron IGBT

SPM6G120-120D

  • Model: SPM6G120-120D
  • 382 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G120-120D

DESCRIPTION

Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

KEY PARAMETER ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25oC UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0V
BVCES1200--V
Continuous Collector Current TC = 25 oC
                                           TC = 80 oC
IC--120
80
A
Pulsed Collector Current, 10mSICM--180A
Zero Gate Voltage Collector Current (For the module)
VCE = 1200 V, VGE=0V Ti=25oC
VCE = 800 V, VGE=0V Ti=125oC
ICES--2
15
mA
mA
Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 80A, VGE = 15V,                       TC = 125 oC
VCE(SAT)-

1.9
2.2

2.3V
IGBT Internal Turn On Gate Resistance  30 Ohm
IGBT Internal Turn Off Gate Resistance  10 Ohm
IGBT Internal Soft Shutdown Turn Off Gate Resistance  100 Ohm
Short Circuit Time, Conditions TBD  10 usec
DC Bus Voltage Rate of Rise With 15V Supply Removed,
dv/dt
 --20V/usec
Junction To Case Thermal ResistanceRθJC--0.27oC/W

 


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