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SPM6G140-060D Sensitron IGBT

SPM6G140-060D

  • Model: SPM6G140-060D
  • 385 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G140-060D

DESCRIPTION

Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

KEY PARAMETER ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25oC UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0V
BVCES600--V
Continuous Collector Current TC = 25 oC
                                         TC = 80 oC
IC--140
140
A
Pulsed Collector Current, 10mSICM--200A
Zero Gate Voltage Collector Current (For the module)
VCE = 600 V, VGE=0V Ti=25oC
VCE = 480 V, VGE=0V Ti=125oC

ICES

 

--2
15
mA
mA
Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 90A, VGE = 15V, TC = 125 oC
VCE(SAT)-1.5
1.8
1.8V
IGBT Internal Turn On Gate Resistance  8.2 Ohm
IGBT Internal Turn Off Gate Resistance  6.2 Ohm
IGBT Internal Soft Shutdown Turn Off Gate Resistance  100 Ohm
Short Circuit Time, Conditions TBD  TBD usec
DC Bus Voltage Rate of Rise With 15V Supply Removed,
dv/dt
 --20V/usec
Junction To Case Thermal ResistanceRθJC--0.22oC/W


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