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SPM6G150-060D Sensitron IGBT

SPM6G150-060D

  • Model: SPM6G150-060D
  • 375 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G150-060D

Description

Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

Key Parameters

ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOL   MIN   
  TYP 
  MAX 
  UNIT 
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 µA, VGE = 0V		BVCES600--V
Continuous Collector Current          TC = 25 oC
                                                    TC = 90 oC		IC--

150

130

A
Pulsed Collector Current, 1mSICM--250A
Gate to Emitter VoltageVGE--+/-20V
Gate-Emitter Leakage Current , VGE = +/-20VIGES--+/-100V
Zero Gate Voltage Collector Current
VCE = 600 V, VGE=0V Ti=25oC
VCE = 480 V, VGE=0V Ti=125oC		ICES--+/-100nA
Collector to Emitter Saturation Voltage, TC = 25 oC
IC = 100A, VGE = 15V,		VCE(SAT)-1.72.0V
Maximum Thermal ResistanceRθJC--0.25oC/W


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