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SPM6G250-120D Sensitron IGBT

SPM6G250-120D

  • Model: SPM6G250-120D
  • 378 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6G250-120D

Description

Phase IGBT BRIDGE, With Gate Driver and Optical Isolation

Key Parameters

ELECTRICAL CHARACTERISTICS PER IGBT DEVICE                           (Tj=25oC UNLESS OTHERWISE SPECIFIED)

PARAMETER    SYMBOL            MIN               TYP         MAX    

    UNIT   

IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 250 µA, VGE = 0V
BVCES1200--V
Continuous Collector Current            TC = 25 OC              
                                                        TC = 90 OC
IC--

250

240

A
Pulsed Collector Current, 1mSICM--600A
Gate to Emitter VoltageVGE--+/-20V
Gate-Emitter Leakage Current , VGE = +/-20VIGES--+/-20V
Gate Threshold Voltage, IC=2mAV GE(TH)3.0-6.0V
Zero Gate Voltage Collector Current
VCE = 1200 V, VGE=0V Ti=25oC
VCE = 900 V, VGE=0V Ti=125oC
ICES--

5

40

mA

mA

Collector to Emitter Saturation Voltage, TC = 25 OC
IC = 200A, VGE = 15V,
VCE(SAT)-2.52.8V
Maximum Thermal ResistanceRqJC --0.10oC/W
Brake IGBT
60A Maximum Current
   0.20oC/W


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