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SPM6M060-010D Sensitron IGBT

SPM6M060-010D

  • Model: SPM6M060-010D
  • 384 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6M060-010D

Description

A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE

Key Parameters

ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)

PARAMETTERSYMBOLLMIINTTYPMAXUNIIT
MOSFET SPECIFICATIONS
Drain to Source Breakdown Voltage
IC = 250, µVGS = 0V
BVCSS100- V
Continuous Drain Current         TC = 25 OC
                                            TC = 90 OC
ID--60
50
A
Pulsed Drain Current, 1mSIDM  100A
Gate to Source VoltageVGS--+/-20V
Gate-Source Leakage Current , VGS = +/-20VIGSS  +/- 100nA
Gate Threshold Voltage, IC=1mAV GS(TH)2 4V
Zero Gate Voltage Drain Current
VCS = 600 V, VGE=0V Ti=25oC
VCS= 480 V, VGE=0V Ti=125oC
ICSS--

 

250
50

 

µA
µA

On-State Resistance, TC = 25 OC
ID = 10A, VGS = 15V,
RDSon-0.0120.015V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCS = 25 V, VGE = 0 V, f = 1 MHz

Ciss
Coss
Cres

 3950
850
250
 pF
Maximum Thermal ResistanceRθJC--0.7oC/W


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