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SPM6M070-020D Sensitron IGBT

SPM6M070-020D

  • Model: SPM6M070-020D
  • 387 Units in Stock
  • Manufactured by: Sensitron

Description of SPM6M070-020D

Description

A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE

Key Parameters

ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE           (Tj=250C UNLESS OTHERWISE SPECIFIED)

PARAMETERSYMBOLMINTYPMAXUNIT
MOSFET SPECIFICATIONS     
Drain-to-Source Breakdown Voltage
ID = 500 μA, VGS = 0V		BVDSS200-
-V
Continuous Drain Current TC = 25 OC
                                 TC = 90 OC		ID--70
60		A
Pulsed Drain Current, Pulse Width limited by TjMaxIDM--300A
Gate to Source VoltageVGS--+/-20V
Gate- Source Leakage Current , VGE = +/-20VIGSS--+/- 200nA
Zero Gate Voltage Drain Current
VDS = 200 V, VGS=0V Ti=25oC
VDS= 160 V, VGS=0V Ti=125oC		ICSS--

 

1

3

 

mA

mA
Static Drain-to-Source On Resistance, Tj = 25 OC
                                                     Tj = 125 OC
ID= 50A, VGS = 15V,		RDSon-

 

0.023
0.050

 

0.025
-

0.025
V
Maximum Thermal ResistanceRθJC--0.35oC/W
Maximum operating Junction TemperatureTjmax-40-150oC
Maximum Storage Junction TemperatureTjmax-55-150oC


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