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STGF14NC60KD STMicro IGBT

STGF14NC60KD

  • Model: STGF14NC60KD
  • 409 Units in Stock
  • Manufactured by: STMicro

Description of STGF14NC60KD

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Key Parameters

Absolute maximum ratings
SymbolParameterValueUnit
TO-220/D²PAKTO-220FP
VCESCollector-emitter voltage (VGE = 0)600V
IC(1)Continuous collector current at TC = 25 °C2511A
IC(1)Continuous collector current at TC = 100 °C147A
ICL(2)Turn-off latching current50A
ICP(3)Pulsed collector current50A
VGEGate-emitter voltage±20V
IFDiode RMS forward current at TC = 25 °C20A
IFSMSurge non repetitive forward current tp = 10 ms
sinusoidal		55A
VISOInsulation withstand voltage (RMS) from all three
leads to external hea sink ( t=1 s; TC = 25 °C)		--2500V
PTOTTotal dissipation at TC = 25 °C8028W
tscwShort circuit withstand time, VCE = 0.5VBR(CES) ,
TC = 125 °C, RG = 10 Ω, VGE = 12 V		10μs
TjOperating junction temperature– 55 to 150°C

1. Calculated according to the iterative formula

IC(TC) =                    Tj(max)– TC                         
              Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))

2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V

3. Pulse width limited by maximum junction temperature and turn-off within RBSOA


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